nts4001n features ? low gate charge for fast switching ? small footprint ? 30% smaller than tsop?6 ? esd protected gate ? pb?free package for green manufacturing (g suffix) applications ? low side load switch ? li?ion battery supplied devices ? cell phones, pdas, dsc ? buck converters ? level shifts maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source voltage v dss 30 v gate?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 270 ma current (note 1) state t a = 85 c 200 power dissipation (note 1) steady state t a = 25 c p d 330 mw pulsed drain current t =10 m s i dm 200 ma operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 270 ma lead temperature for soldering purposes (1/8o from case for 10 s) t l 260 c 1. surface mounted on fr4 board using 1 in sq. pad size (cu area = 1.127 in sq. [1 oz] including traces). device package shipping ordering information nts4001nt1 sc?70 3000 units/reel top view sc?70 / sot?323 case 419 style 8 marking diagram 2 1 td = device code w = work week 1 3 drain gate source top view sc?70 sot?323 (3 leads) drain gate 3 1 2 v (br)dss r ds(on) typ i d max 30 v 1.0 @ 4.0 v 1.5 @ 2.5 v 270 ma NTS4001NT1G sc?70 (pb?free) 3000 units/reel pin assignment tdw source 3 2 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 100 m a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 60 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v 1.0 m a gate?to?source leakage current i gss v ds = 0 v, v gs = 10 v 1.0 m a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 100 m a 0.8 1.2 1.5 v gate threshold temperature coefficient v gs(th) /t j ?3.4 mv/ c drain?to?source on resistance r ds(on) v gs = 4.0 v, i d = 10 ma 1.0 1.5 w () v gs = 2.5 v, i d = 10 ma 1.5 2.0 forward transconductance g fs v ds = 3.0 v, i d = 10 ma 80 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v 50v 20 33 pf output capacitance c oss v ds = 5.0 v 19 32 reverse transfer capacitance c rss 7.25 12 total gate charge q g(tot) v gs = 5.0 v, v ds = 24 v, i 01a 0.9 1.3 nc threshold gate charge q g(th) i d = 0.1 a 0.2 gate?to?source charge q gs 0.3 gate?to?drain charge q gd 0.2 switching characteristics (note 3) turn?on delay time td (on) v gs = 4.5 v, v dd = 5.0 v, i 10 ma r 50 w 17 ns rise time tr i d = 10 ma, r g = 50 w 23 turn?off delay time td (off) 94 fall time tf 82 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i 10 ma t j = 25 c 0.65 0.7 v i s = 10 ma t j = 125 c 0.43 reverse recovery time t rr v gs = 0 v, di s /dt = 8.0 a/ m s, i s = 10 ma 5.0 ns 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. nts4001n product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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